氮化鎵GaN元件動態可靠度分析儀
除了擁有氮化鎵 (GaN) 元件動態參數分析儀(Device Dynamics Analyzer)之外，堉宸科技也提供元件動態參數分析儀，可以同時測試多個GaN元件的動態特性，顛覆傳統的單顆GaN DUT動態參數分析，進而達到同時多個GaN元件在操作(swtiching)下的動態量測的效果。
氮化鎵GaN元件動態參數分析儀主要特色：
1. 同時量測多個GaN 元件(Ｍulti-DUT in parallel) 動態參數，例如Dynamic Rdson degradation2. 溫度、電壓、電流、頻率、開關比(Duty) 皆可獨立測試 (5 independent parameters acceleration MTTF)
3. HSW & ZVS available
■ Dynamics under hard switching or soft switching
■ Switching On-Vg : -12V~12V for device benchmark
■ Switching Voltage : up to 800V
■ Switching Frequency : up to 300k Hz
■ Switching Duty : 10%~90%
■ Temperature : 25C~175C
■ Dynamic Rdson(HSW, ZVS), Dynamic HTOL (SALT)…
There are 3 characteristic features ：
Dynamics under hard-switching or soft-switching
Switching On-Vg:
-12V~12Vfor device benchmark.
Dynamic Vth under hard-switching or soft-switching.
Methodology to Evaluate System Lifetime
The specifications of our GaN Dynamic Reliability Analyzer are as follows：
◆ Switching On-Vg : -12V~12V for device benchmark◆ Switching Voltage : up to 800V
◆ Switching Current : <10A
◆ Switching Frequency : up to 300k Hz
◆ Switching Duty : 10%~90%
◆ Temperature : 25C~175C
◆ Characterization Items : Dynamic Rdson(HSW, ZVS), Dynamic HTOL (SALT), Pulse I-V…